Study by AES of the titanium nitruration in the growing of TiN thin films by PLD technique

A series of different TiNx thin films were grown by PLD. The purpose for this work was to study through the AES interpretation, how the different conditions of the partial pressure of N inside the chamber during the growing of these thin films, affects the stoichiometry of the TiNx deposited. The results obtained were that the different thin films change each one through TiNx (x = 0.88-1.33). The results were supported with XPS and EELS spectroscopy doing also an analysis of elemental ratio to show the stoichiometry and sub-stoichiometry obtained. This work concludes the adequate conditions for this experiment to obtain TiN as thin film by PLD at room temperature, supported with the results in the present work and the interpretation of the AES spectra even when Ti and N peaks overlap.