Article ID Journal Published Year Pages File Type
5366762 Applied Surface Science 2007 7 Pages PDF
Abstract

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH3 molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH3 impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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