Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5366794 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠Tb:Lu2SiO5 films are firstly successfully fabricated on silicon (1 1 1) substrates by Pechini sol-gel method combined with the spin-coating technique. The method is simple, cheap and nontoxic. ⺠Tb:Lu2SiO5 films are crystallized into A-type LSO phase at 1000 °C, followed by a phase transition from A-type LSO to B-type LSO occurred at 1100 °C. ⺠The AFM observation reveals that the phosphor films are uniform and crack-free.
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Authors
Si-qing Shen, Qing Ma, Zhi-bin Xu, Jian-jun Xie, Ying Shi, Jian Wang, Fei Ai,