| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5366858 | Applied Surface Science | 2009 | 5 Pages |
Abstract
The growth of ZnO film on Si(1Â 0Â 0) substrate has been studied with synchrotron radiation (SR) assisted MOCVD method. The diethylzinc (DEZn) and CO2 are used as source materials, while Nitrogen is employed as a carrier gas for DEZn. With the assistance of SR the ZnO film can be deposited even at room temperature. XRD, SEM and photoluminescence (PL) studies show that the crystal quality of ZnO films grown with the assistance of SR is higher than that of those without SR assistance. The growth mechanism of ZnO film with the SR assistant MOCVD system is primarily discussed.
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Authors
Yang Guangtao, Zhang Guobin, Zhou Hongjun, Qi Zeming,