| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5367125 | Applied Surface Science | 2007 | 4 Pages |
Abstract
We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO2/4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S.H. Choi, D. Wang, J.R. Williams, M. Park, W. Lu, S. Dhar, L.C. Feldman,