Structure and RT ferromagnetism of Fe-doped AlN films

Al1−xFexN1−δ thin films with 0 ≤ x ≤ 13.6% were deposited by dc magnetron co-sputtering at room temperature (RT). It is found that Fe atom will substitutes the Al atom in the lattice when x ≤ 1.2%, while it will embed into the interstice of the lattice at larger Fe content. RT ferromagnetism was observed in all doped samples. A maximum saturated magnetization 2.81 emu/cm3 of the film is found to be induced by AlFeN ternary alloy when x = 1.2%.