Strongly oriented BST films on La0.9Sr1.1NiO4 electrodes deposited on various substrates for integration of high capacitances on silicon

In this study, we demonstrate the successful oriented growth of Ba0.6Sr0.4TiO3(h 0 0)/La0.9Sr1.1NiO4(0 0 l) stacks by pulsed laser deposition on SiO2/Si for application in integrated capacitances. We show that for specific deposition conditions the La0.9Sr1.1NiO4 layer spontaneously grows along its c-axis both on SiO2/Si and on Pt/Ti/SiO2/Si substrates, serving as a template for the subsequent oriented growth of Ba0.6Sr0.4TiO3 (BST). Moreover, as the resistivity of the La0.9Sr1.1NiO4 layer is ∼1 mΩ cm, it also fulfills the function of bottom electrode for integration of perovskite-based capacitors on silicon. This holds the promise of integrating epitaxial BST with very high dielectric constant compared to polycrystalline BST films. Still, preliminary capacitance measurements on Al/BST/La0.9Sr1.1NiO4/SiO2/Si capacitors indicate that the stack deposition needs further optimization.