Article ID Journal Published Year Pages File Type
5367224 Applied Surface Science 2006 6 Pages PDF
Abstract

In this presentation we focus on the synthesis of buried multielemental semiconductor nanoparticles by sequential high dose ion implantation and post-implantation annealing. Nanocluster formation and alloying was studied by Raman-, Rutherford Backscattering Spectroscopy (RBS) and X-ray diffraction analysis (XRD) on a materials library of CdSxSe1−x nanoclusters buried in thermally grown SiO2 on silicon. Characteristic peak shifts of the LO-Raman signal and XRD-peaks due to varying S- and Se-fraction indicate that the ion beam synthesized clusters consist of a solid solution of Cd, S and Se. In addition the influence of the implanted dose ratios on the structural evolution of the nanocluster-SiO2 system will be discussed.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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