Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367224 | Applied Surface Science | 2006 | 6 Pages |
Abstract
In this presentation we focus on the synthesis of buried multielemental semiconductor nanoparticles by sequential high dose ion implantation and post-implantation annealing. Nanocluster formation and alloying was studied by Raman-, Rutherford Backscattering Spectroscopy (RBS) and X-ray diffraction analysis (XRD) on a materials library of CdSxSe1âx nanoclusters buried in thermally grown SiO2 on silicon. Characteristic peak shifts of the LO-Raman signal and XRD-peaks due to varying S- and Se-fraction indicate that the ion beam synthesized clusters consist of a solid solution of Cd, S and Se. In addition the influence of the implanted dose ratios on the structural evolution of the nanocluster-SiO2 system will be discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
P. Huber, H. Karl, B. Stritzker,