Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367321 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Sn-doped Ga1.4In0.6O3 films have been prepared on α-Al2O3 (0 0 0 1) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The Sn-doping was varied from 0% to 7% (atomic ratio). Polycrystalline films with resistivity of 4.9 Ã 10â3Ω cm, carrier concentration of 5.9 Ã 1019 cmâ3 and Hall mobility of 21.4 cm2 vâ1 sâ1 was obtained at 5 at.% of Sn concentration. The average transmittance for the Sn-doped Ga1.4In0.6O3 films in the visible range was over 90%. The bandgap of the films varies from 3.85 to 4.21 eV.
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Authors
Fan Yang, Jin Ma, Caina Luan, Lingyi Kong,