| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5367393 | Applied Surface Science | 2011 | 7 Pages |
Abstract
⺠SiON films were synthesised by RGPP using oxygen rectangular pulses. ⺠O2 introduction results in Si target potential decay due to its favoured adsorption. ⺠O/N ratio depends on frequency of sputtering mode alternation. ⺠Over a certain frequency, oxidised steady-state prevails resulting in SiO2 formation.
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Authors
E. Aubry, S. Weber, A. Billard, N. Martin,