The conductance and capacitance-frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si surface. The barrier height and ideality factor values of 0.67 ± 0.02 eV and 2.02 ± 0.03 for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface states and their relaxation time have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics in the energy range of ((0.42 ± 0.02) − Ev)-((0.66 ± 0.02) − Ev) eV. The interface state density values ranges from (4.21 ± 0.14) × 1013 to (3.82 ± 0.24) × 1013 cm−2 eV−1. Furthermore, the relaxation time ranges from (1.65 ± 0.23) × 10−5 to (8.12 ± 0.21) × 10−4 s and shows an exponential rise with bias from the top of the valance band towards the midgap.