Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367455 | Applied Surface Science | 2007 | 4 Pages |
The surface leakage currents (SLCs) and surface sheet resistances (SSRs) of CdZnTe (1Â 1Â 0), (1Â 1Â 1) A and (1Â 1Â 1) B surfaces after etching with Br-MeOH solution, chemo-mechanical polishing (CMP) and passivation were measured in the parallel stripe model, respectively. Meanwhile the surface compositions were determined by X-ray photoelectron spectroscopy (XPS). Te enrichment introduced by etching with Br-MeOH resulted in the increase of the SLCs of CdZnTe wafers. After chemo-mechanical polishing, Te enrichment was removed, and SLCs decreased. CdZnTe (1Â 1Â 1) B without Te enrichment possesses higher SLC than that of (1Â 1Â 1) A, and (1Â 1Â 0) surface has the lowest SLC, which should be attributed to the lower surface dangling bonds. Passivation treatment with NH4FÂ +Â H2O2 is an effective method to decrease SLCs of CdZnTe, by which the SLC was decreased two orders.