| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5367466 | Applied Surface Science | 2007 | 4 Pages |
The II-VI compound semiconductor, ZnSe having wide band gap between 2.58 and 2.82Â eV is a promising material for use in photovoltaic devices, blue light emitting diodes and laser diodes. Several methods have been used to prepare ZnSe thin films. We have deposited ZnSe films on ultra-clean glass substrate by sintering technique. The optical, structural and electrical properties of ZnSe thin films have been examined. The optical band gap of these films is studied using reflection spectra in wavelength range 325-600Â nm and structure of these films is studied using XRD. The DC conductivity of the films was measured in vacuum by two-probe technique.Sintering is a very simple and viable method compared to other intensive methods. The results of the present investigation will be useful in characterizing the material ZnSe for its applications in photovoltaics.
