| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5367480 | Applied Surface Science | 2007 | 6 Pages |
Gallium sulphide (GaS) is a layer structure semiconductor with relatively wide energy gap (Eg (295Â K)Â =Â 2.5Â eV and Eg (80Â K)Â =Â 2.62Â eV). It has potential applications in some areas of optoelectronics. This paper presents the investigations of the influence of light intensity on surface recombination velocity of charge carriers in GaS single crystals. To attain this purpose spectral dependences (between 420 and 550Â nm) of absorption coefficients, reflectivity coefficients and photoconductivity were measured in vacuum. The investigations were performed for various light intensities in several temperatures from 80 to 333Â K. The least square method was applied to fit the theoretical dependences of photoconductivity on wavelength and intensity of illumination at these temperatures. From the fittings the temperature and light intensity dependences of surface recombination velocity and bulk lifetime of charge carriers were obtained.
