Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367567 | Applied Surface Science | 2009 | 4 Pages |
A pulsed KrF excimer laser of irradiance of about 108Â W/cm2 was utilized to synthesize Si nanocrystals on SiO2/Si substrates. The results were compared with that ones obtained by applying low bias voltage to Si(1Â 0Â 0) target in order to control the kinetic energy of plasma ions. Glancing incidence X-ray diffraction spectra indicate the presence of silicon crystalline phases, i.e. (1Â 1Â 1) and (2Â 2Â 0), on SiO2/Si substrates. The average Si nanocrystal size was estimated to be about 45Â nm by using the Debye-Scherrer formula. Scanning electron microscopy and atomic force microscopy images showed the presence of nanoparticles of different size and shape. Their distribution exhibits a maximum concentration at 49Â nm and a fraction of 14% at 15Â nm.