Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367614 | Applied Surface Science | 2006 | 6 Pages |
Abstract
Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0Â 0Â 0Â 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0Â 0Â 0Â 1) substrates.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
C.G. Zhang, W.D. Chen, L.F. Bian, S.F. Song, C.C. Hsu,