Article ID Journal Published Year Pages File Type
5367687 Applied Surface Science 2011 4 Pages PDF
Abstract

Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. Taguchi method was used to find the optimal deposition parameters including oxygen partial pressure, argon partial pressure, substrate temperature, and sputtering power. By employing the analysis of variance, we found that the oxygen and argon partial pressures were the most influencing parameters on the electrical properties of ZnO:Ga films. Under the optimized deposition conditions, the ZnO:Ga films showed acceptable crystal quality, lowest electrical resistivity of 2.61 × 10−4 Ω cm, and high transmittance of 90% in the visible region.

Research highlights► ZnO:Ga thin films are prepared by DC reactive magnetron sputtering. ► The Taguchi method is applied to find the optimal growth conditions. ► ZnO:Ga films have acceptable structural, electrical, and optical properties.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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