Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367732 | Applied Surface Science | 2008 | 8 Pages |
Abstract
We report in this paper the use of Co2Si silicide as a template layer for the integration of magnetic materials and structures on silicon substrate. By undertaking Co deposition on silicon at a temperature of about 300 °C, we show that it is possible to obtain a smooth and epitaxial Co2Si layer, which can act as a template layer preventing the reaction between Co and other transition metals with silicon. Two examples of over-growth of magnetic materials and structures on this template layer will be presented: growth of ferromagnetic Co layers and of magnetic tunnel junctions (Co(Fe)/AlOx/NiFe).
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Authors
S. Olive Mendez, V. Le Thanh, A. Ranguis, J. Derrien,