Strained-Si with carbon incorporation for MOSFET source/drain engineering

The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH3SiH3) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large Dit at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower Rs, and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.