Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367768 | Applied Surface Science | 2008 | 4 Pages |
Abstract
The stress effect of SiGe pMOSFETs has been investigated to understand the electrical properties of devices fabricated on the Si bulk and PD SOI substrates. A comparison of the drain saturation current (ID.sat) and maximum transconductance (gm,max) in both the SiGe bulk and the SiGe PD SOI devices clearly shows that the SiGe PD SOI is more immune from hot-carriers than the SiGe bulk. The stress-induced leakage current (SILC) is hardly detectable in ultra-thin oxide, because the increasing contribution of direct tunneling is comparable to the trap-assisted component. The SiGe PD SOI revealed degraded properties being mainly associated with the detrimental silicon-oxide interface states of the SOI structure.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Sang-Sik Choi, A-Ram Choi, Jeon-Wook Yang, Yong-Woo Hwang, Deok Ho Cho, Kyu-Hwan Shim,