Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367784 | Applied Surface Science | 2008 | 5 Pages |
Abstract
We investigate the hole transport in p-channel field-effect transistors doped with boron, at low temperatures (6-28Â K). In transistors with a relatively large dimension, we observe the acceptor-mediated hopping and carrier freezeout, both of which are strongly influenced by the gate bias. In nanoscale transistors, these features turn into single-charge tunneling, i.e., the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, indicating that what we have observed is single-charge-transistor operation by a single-acceptor quantum dot.
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Authors
Y. Ono, M.A.H. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi,