| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5367873 | Applied Surface Science | 2008 | 4 Pages |
Abstract
We investigated the work function (WF) change of a silicon surface being under cesium ion bombardment and simultaneous oxygen flooding with various oxygen pressures at the sample surface. It was found that WF of Cs+ ion sputtered Si decreases under oxygen flooding. This decrease provides an essential grow of secondary ion yields of some negative ions, sputtered from Si. At the same time Siâ ion yield decreases approximately in two times. In the paper we have discussed possible explanations of our experimental data: we considered a surface composition change, formation of surface dipoles and work function change caused by oxygen adsorption, and their relationships between each other.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y. Kudriatsev, A. Villegas, S. Gallardo, G. Ramirez, R. Asomoza, V. Mishurnuy,