Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367886 | Applied Surface Science | 2008 | 4 Pages |
Abstract
In this paper, the bias-dependent electron transport is investigated in detail in a magnetic double-barrier nanostructure in the presence of two bias voltages. It is shown that the large spin-polarization can be achieved in such a nanostructure, and the degree of the spin-polarization is strongly dependent on the applied bias. These interesting properties can provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jian-Duo Lu,