| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5367922 | Applied Surface Science | 2008 | 5 Pages |
Abstract
The synthesis of combinatorial Bi2âxSbxSe3 thin films by arrested precipitation technique (APT) using triethanolamine-bismuth, triethanolamine-antimony and sodium selenosulphite as sources of Bi3+, Sb3+ and Se2â, respectively is investigated on commercial glass substrates. The growth mechanism of film formation, composition and surface morphology of the as deposited films were studied as a function of preparative parameters and bath composition. The films were monophasic, polycrystalline and covered the surface of the substrate completely. Energy dispersive X-ray analysis gave coherent elemental composition indicating single phase BiSbSe3 was made. The good results obtained for Bi2âxSbxSe3 thin films revealed that arrested precipitation technique is best suited for the deposition of large area thin films on conducting/nonconducting substrates to produce materials for device applications.
Keywords
Related Topics
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Chemistry
Physical and Theoretical Chemistry
Authors
N.S. Patil, A.M. Sargar, S.R. Mane, P.N. Bhosale,