| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5368062 | Applied Surface Science | 2011 | 6 Pages |
Abstract
ⶠDeposited by r.f. sputtering, HfSiO films with different ratios of Si:Hf could be a combination of hafnium dioxide, hafnium silicate and silicon dioxide. ⶠAnnealing in air for 30 min, hafnium silicate decomposes above the temperature of 600 °C. ⶠWith the decomposition of hafnium silicate, the oxygen content in HfSiO films reduces and hafnium silicide forms in the bulk of the films.
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Authors
H. Wang, P. Wu, X.F. Li, S. Chen, S.P. Zhang, B.B. Song,