Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5368503 | Applied Surface Science | 2010 | 5 Pages |
Abstract
The nanocrystal thin films of zinc oxide doped by Al (ZnO:Al) were deposited by dc reactive magnetron sputtering on the glass substrates, in the pressure range of 33-51 Pa. From the X-ray diffraction patterns, the nanocrystalline structure of ZnO:Al films and the grain size were determined. The optical transmission spectra depend from the sputtering pressure, but their average value was 90% in the range from 33 Pa to 47 Pa. Also, the sputtering pressure changes the optical band gap of ZnO:Al films, which is highest for films deposited at 37 Pa, 40 Pa and 47 Pa. The obtained films at room temperature have a sheet resistance of 190 Ω/cm2 which increases with time, but the films annealed at temperature of 400 °C have constant resistance. The surface morphology of the films was studied by Scanning electron microscopy. XPS spectra showed that the peak of O1s of the as-deposited films is smaller than the peak of the annealed ZnO:Al films.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Atanas Tanuševski, Verka Georgieva,