Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5368676 | Applied Surface Science | 2006 | 5 Pages |
Abstract
Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12 - BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization Pr and a coercive field Ec of 3.9 μC/cm2 and 70 kV/cm for the film annealed in the microwave oven and 20 μC/cm2 and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in non-volatile memories. On the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories.
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Authors
A.Z. Simões, M.A. RamÃrez, B.D. Stojanovic, E. Longo, J.A. Varela,