| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5368678 | Applied Surface Science | 2006 | 5 Pages |
Abstract
The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn2GeO4 has been formed with (2Â 2Â 0) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761Â nm, which originate from the transition between oxygen vacancy (Vo*) and Zn vacancies (VZn), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn2GeO4 from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn2GeO4:Mn.
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Authors
Tianhang Zheng, Ziquan Li, Jiankang Chen, Kai Shen, Kefei Sun,