Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5368787 | Applied Surface Science | 2010 | 4 Pages |
Abstract
The reactivity of H2 gas with the In and Sn surfaces was quantitatively measured by a volumetric method at pressures ranging from 10â7 to 10â2Â Pa at 298Â K. Significant enhancement of H2 reactivity was observed when O2 or H2O preadsorbed on the surface of In and Sn before H2 exposure. The formation of the oxygen deficient SnO2âx and In2O3âz in the surface layers is proposed as a reason for such a facilitating the H2 dissociation and resulting in the enhancement of the H2 reactivity at 298Â K.
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Authors
Masahiro Terashima, Rui Yamakawa, Yukinori Tani, Hirohisa Uchida, Shunsuke Kato, Yoshihito Matsumura, Haru-Hisa Uchida, Masashi Sato, Volodymyr A. Yartys, Jan Petter Maehlen,