| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5368793 | Applied Surface Science | 2010 | 5 Pages |
Abstract
InGaN/GaN heterostructures have been deposited onto (0Â 0Â 0Â 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y. Guo, X.L. Liu, H.P. Song, A.L. Yang, X.Q. Xu, G.L. Zheng, H.Y. Wei, S.Y. Yang, Q.S. Zhu, Z.G. Wang,