| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5368928 | Applied Surface Science | 2009 | 5 Pages |
Abstract
The electrical properties and interface chemistry of Cr/6H-SiC(0Â 0Â 0Â 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H2 and in situ Ar+ ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I-V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar+ bombardment. Formation of ohmic nano-contacts on Ar+-bombarded surfaces was observed.
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Authors
MiÅosz Grodzicki, Szymon Smolarek, Piotr Mazur, Stefan Zuber, Antoni Ciszewski,