Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5368932 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Using a spectroscopic ellipsometry, pseudodielectric functions ãÉã of InxAl1âxAs ternary alloy films (x = 0.43, 0.62, 0.75, and 1.00) from 0.74 to 6.48 eV were determined. Fast in-situ chemical etching to effectively remove surface overlayers using charge-coupled device detector and to avoid the reoxidation of the surface of films prior to the ellipsometric spectrum measurement was performed. At the high energy region, an additional critical point structure which is interpreted as the Eâ²1 transition from the band structure calculation of the linear augmented Slater-type orbital method was reported.
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Authors
J.J. Yoon, T.H. Ghong, J.S. Byun, Y.J. Kang, Y.D. Kim, H.J. Kim, Y.C. Chang, J.D. Song,