Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5368960 | Applied Surface Science | 2009 | 4 Pages |
Abstract
We report on the fabrication of single phase of the Si(1Â 1Â 1)-(â31Â ÃÂ â31)-In reconstruction surface, observed by scanning tunneling microscopy (STM) at room temperature. By depositing specific amounts of indium atoms while heating the Si(1Â 1Â 1)-(7Â ÃÂ 7) substrate at a critical temperature, the single phase of Si(1Â 1Â 1)-(â31Â ÃÂ â31)-In surfaces could be routinely obtained over the whole surface with large domains. This procedure is certified by our high-resolution STM images in the range of 5-700Â nm. Besides, the high resolution STM images of the Si(1Â 1Â 1)-(â31Â ÃÂ â31)-In surface were also presented.
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Authors
Zheng Wei, Heechul Lim, Geunseop Lee,