Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5368985 | Applied Surface Science | 2009 | 4 Pages |
Abstract
We have investigated on the molecular beam epitaxy (MBE) of Te-doped GaSb films on ZnTe buffer. Te-doped GaSb (GaSb:Te) films with and without ZnTe buffer were grown on (0Â 0Â 1) GaAs substrates. GaSb:Te/ZnTe/GaAs film revealed higher mobility (=631Â cm2/VÂ s) in comparison to GaSb:Te/GaAs film (=249Â cm2/VÂ s). To explain the higher mobility of GaSb:Te on ZnTe buffer, dislocation density and temperature dependence of Hall measurement results were analyzed. Temperature dependence of Hall measurement shows strong influence of the dislocation scattering, which indicates that dislocation reduction by the ZnTe buffer enhances the carrier mobility of GaSb films.
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Authors
Siyoung Kim, Woong Lee, Mina Jung, Jiho Chang, Aung Khaing Nyi, Hongchan Lee, Joonsuk Song, Dongcheol Oh, Seunghwan Park, Takafumi Yao,