| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5369139 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Thin films of [Cd{SSi(O-But)3}(S2CNEt2)]2, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.
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Physical and Theoretical Chemistry
Authors
Andrei Rotaru, Anna Mietlarek-KropidÅowska, Catalin Constantinescu, Nicu ScÄriÅoreanu, Marius Dumitru, Michal Strankowski, Petre Rotaru, Valentin Ion, Cristina Vasiliu, Barbara Becker, Maria Dinescu,