| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5369144 | Applied Surface Science | 2009 | 5 Pages |
Abstract
Transmission electron microscopy images and selected area diffraction patterns showed excellent crystalline quality of both the buffer and ZnO overlayer. When non-optimized growth temperatures were employed, post-growth annealing was found to greatly enhance the ratio of band-edge to deep level emission.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S.C. Hung, P.J. Huang, C.E. Chan, W.Y. Uen, F. Ren, S.J. Pearton, T.N. Yang, C.C. Chiang, S.M. Lan, G.C. Chi,