Article ID Journal Published Year Pages File Type
5369177 Applied Surface Science 2009 5 Pages PDF
Abstract

A unique vapor phase deposition (VPD) technique was designed and built to achieve in situ CdCl2 treatment of CdTe film. The substrate temperature was 400 °C, and the temperature of CdTe mixture with CdCl2 source was 500 °C. The structural and morphological properties of CdTe have been studied as a function of wt.% CdCl2 concentration by using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). XRD measurements show that the presence of CdCl2 vapor induces (1 1 1)-oriented growth in the CdTe film. SEM measurements have shown enhance growth of grains, in the presence of CdCl2. From AFM the roughness of the films showed a heavy dependence on CdCl2 concentration. In the presence of 4% CdCl2 concentration, the CdTe films roughness has a root mean square (rms) value of about 275 Å. This value is about 831 Å for the non-treated CdTe films.

Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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