Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5369265 | Applied Surface Science | 2006 | 6 Pages |
Abstract
We achieved the growth of cubic silicon carbide (SiC) films on (1 0 0)Si substrates by pulsed laser deposition (PLD) at moderate temperatures such as 750 °C, from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The morphology of deposited films is dominated by columns nucleated from a thin nanostructured beta silicon carbide (β-SiC) interface layer. The combined effects of columnar growth, tilted facets of the emerging columns and the presence of particulates on the film surface, lead to a rather rough surface of the films.
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Authors
C. Ghica, C. Ristoscu, G. Socol, D. Brodoceanu, L.C. Nistor, I.N. Mihailescu, A. Klini, C. Fotakis,