Low-temperature growth and optical properties of Ce-doped ZnO nanorods

Ce-doped ZnO nanorods were prepared by sol-gel method with low annealing temperature of 500 °C. The effects of Ce doping on the structural and optical properties of ZnO nanorods were investigated in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman-scattering spectroscopy measurements. The XRD results showed that Ce was doped into ZnO nanorods because of no diffraction peaks of Ce or cerium oxide in the pattern. The synthesis temperature of Ce-doped ZnO nanorods decreased from 900 to 500 °C compared to that of pure ZnO nanorods. Compared with pure ZnO, UV peaks shifted towards the blue color and the intensity of visible peaks decreased after Ce doping. The PL properties of Ce-doped ZnO nanorods depend on both the synthesis temperatures and the dopant. In Raman spectra of doped samples, some classical modes, such as A1 and E1 modes, disappear, and the E2 modes blue shift.