| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5369441 | Applied Surface Science | 2008 | 6 Pages |
ZrOxNy thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrOxNy thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrOxNy thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrOxNy thin films and therefore, the decreased optical band gap (Eg) values as a result of the increased valence-band maximum and lowered conduction-band minimum.
