Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5369448 | Applied Surface Science | 2008 | 5 Pages |
The growth and properties of gadolinium oxide (Gd2O3) films prepared by anodic oxidation were investigated. Uniform Gd2O3 thin film with good oxide quality was obtained. The X-ray diffraction (XRD) pattern of the Gd2O3 films showed that they had a poly-crystalline structure. The dielectric constants of Gd2O3 films oxidized at 30 and 60Â V are 9.4 and 12.2, respectively. The equivalent oxide thickness (EOT) of the Gd2O3 stacked oxide is in the range of 5.8-9.4Â nm. The MOS capacitor with Gd2O3 exhibits interesting electrical properties. Longer oxidation time reduced the leakage current density for 30Â V anodic oxidation but increased the leakage current density for 60Â V anodic oxidation. This work reveals that Gd2O3 could also be an alternative dielectric for Si substrate and therefore, might pave the way to fabricate CMOS devices in the future.