Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5369669 | Applied Surface Science | 2007 | 4 Pages |
Abstract
We have identically prepared Ni/n-GaAs/In Schottky barrier diodes (SBDs) with doping density of 7.3Â ÃÂ 1015Â cmâ3. The barrier height for the Ni/n-GaAs/In SBDs from the current-voltage characteristics have varied from 0.835 to 0.856Â eV, and ideality factor n from 1.02 to 1.08. We have determined a lateral homogeneous barrier height value of 0.862Â eV for the Ni/n-GaAs/In SBD from the experimental linear relationship between barrier heights and ideality factors.
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Authors
H. DoÄan, H. Korkut, N. Yıldırım, A. Turut,