Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5369837 | Applied Surface Science | 2007 | 7 Pages |
Abstract
Au contacts were deposited on bulk, n-type single-crystal ZnO at either 77 K or 300 K.The room temperature deposition produced contacts with ohmic characteristics. By sharp contrast, the cryogenic deposition produced rectifying characteristics with barrier heights around 0.4 eV. The differences in contact behavior were stable to anneal temperatures of â¼300 °C. There were no differences in near-surface stoichiometry for the different deposition temperatures, while the low temperature contacts showed a more uniform appearance. With further optimization of the pre-deposition cleaning process, this may be a useful method for engineering barrier heights on ZnO.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.S. Wright, Rohit Khanna, L.F. Voss, L. Stafford, B.P. Gila, D.P. Norton, S.J. Pearton, Hung-Ta Wang, S. Jang, T. Anderson, J.J. Chen, B.S. Kang, F. Ren, H. Shen, Jeffrey R. LaRoche, Kelly Ip,