| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5369842 | Applied Surface Science | 2007 | 4 Pages |
Abstract
Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870âK with Ni2Si, NiSi and NiSi2 phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi2 phase takes place at 1170âK. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.
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Authors
S. Abhaya, G. Amarendra, S. Kalavathi, Padma Gopalan, M. Kamruddin, A.K. Tyagi, V.S. Sastry, C.S. Sundar,