Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5369907 | Applied Surface Science | 2006 | 4 Pages |
Abstract
The effects of HfOxNy on the electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of â¼2Â ÃÂ 10â8Â A/cm2 at 1Â MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfOxNy film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfOxNy or HfO2 structure.
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Authors
Ran Jiang, Erqing Xie, Zhiyong Chen, Zhenxing Zhang,