Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5369943 | Applied Surface Science | 2006 | 5 Pages |
Abstract
Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg0.7Cd0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg0.7Cd0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg0.7Cd0.3Te epilayer. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg1 â xCdxTe epilayers are improved by annealing and that as-grown n-Hg1 â xCdxTe epilayers can be converted to p-Hg1 â xCdxTe epilayers by in situ annealing.
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Authors
Y.S. Ryu, T.W. Kang, T.W. Kim,