| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5369970 | Applied Surface Science | 2006 | 5 Pages |
Abstract
This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1Â 0Â 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
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Authors
L. Imhoff, O. Heintz, V. Gauthier, C. Marco de Lucas, S. Bourgeois,