Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5370087 | Applied Surface Science | 2006 | 5 Pages |
Abstract
Polycrystalline zirconium tin titanate (Zr0.8Sn0.2TiO4, ZST) thin films with thickness of 81 nm were deposited successfully along the (1 0 0) on a p-type Si substrate by an improved sol-gel method. The deposited films were crystallized when annealing temperature was up to 450 °C. The thickness and compositions of the interface layer between the ZST films and Si substrate were identified by high-resolution transmission electron microscope (HRTEM). The electrical properties such as leakage current density, flat-band voltage and capacitance of the films were measured and discussed. Furthermore, the mechanism of the leakage current was also investigated.
Related Topics
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Physical and Theoretical Chemistry
Authors
Ru-Yuan Yang, Yan-Kuin Su, Min-Hang Weng, Yung-Shou Ho,