Characterization of a Co-Se thin film by scanning Auger microscopy and Raman spectroscopy

Scanning Auger microscopy and micro-Raman spectroscopy are combined to characterize a Co-Se thin film sample, containing 84 at.% Se, which had been modified in localized areas following excitation with an intense focused Ar+ laser (514.5 nm). The information obtained helps to establish that a previous assignment for a Co-Se sample of Raman features between 168 and 175 cm−1 actually refers to an oxygenated Co-Se species, and that Co-Se interactions in a Se-rich environment give rise to Raman structure between 181 and 184 cm−1. Comparisons are made for the use of Ar+ and HeNe laser sources for Raman measurements in this context; the latter in general gives both better resolution and better signal-to-noise characteristics.