Article ID Journal Published Year Pages File Type
5370146 Applied Surface Science 2006 4 Pages PDF
Abstract

The effect of hydrogen on the reactive ion etching (RIE) of GaAs in the CF2Cl2 plasma is discussed. The addition of hydrogen into the reaction mixture improves the sharpness of etch borders; the etched surface is smooth for etching depth > 1 μm, etching rate is time-constant.

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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface
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